Bu e-kitob haqida
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Muallif haqida
C.K Maiti, S Chattopadhyay, L.K Bera
Bu e-kitobni baholang
Fikringizni bildiring.
Qayerda o‘qiladi
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