SiGe Based Technologies

Y. Shiraki · T.P. Pearsall · Erwin Kasper

ፌብ 1993 · European Materials Research Society Symposia Proceedings መጽሐፍ 31 · Elsevier

ኢ-መጽሐፍ

289

ገጾች

ብቁ

የተሰጡት ደረጃዎች እና ግምገማዎች የተረጋገጡ አይደሉም የበለጠ ለመረዳት

ስለዚህ ኢ-መጽሐፍ

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

ስለደራሲው

Yasuhiro Shiraki is X at Tokyo City University, Japan.

Erwin Kasper studied physics at the Universities of Münster and Tübingen (Germany), where he obtained his PhD in 1965 and the habilitation to teach physics in 1969. After scientific spells in the University of Tucson, Arizona (1966) and in Munich (1970), he resumed his research and teaching in the Institute of Applied Physics, University of Tübingen, where he was later appointed professor. He lectured on general physics and especially on electron optics. The subject of his research was theoretical electron optics and related numerical methods on which he published numerous papers. After his retirement in 1997, he published a book on numerical field calculation (2001).