Radiation Effects in Silicon Carbide

ยท Materials Research Forum LLC
แƒ”แƒšแƒฌแƒ˜แƒ’แƒœแƒ˜
172
แƒ’แƒ•แƒ”แƒ แƒ“แƒ˜
แƒ›แƒ˜แƒกแƒแƒฆแƒ”แƒ‘แƒ˜
แƒ แƒ”แƒ˜แƒขแƒ˜แƒœแƒ’แƒ”แƒ‘แƒ˜ แƒ“แƒ แƒ›แƒ˜แƒ›แƒแƒฎแƒ˜แƒšแƒ•แƒ”แƒ‘แƒ˜ แƒ“แƒแƒฃแƒ“แƒแƒกแƒขแƒฃแƒ แƒ”แƒ‘แƒ”แƒšแƒ˜แƒ ย แƒจแƒ”แƒ˜แƒขแƒงแƒ•แƒ”แƒ— แƒ›แƒ”แƒขแƒ˜

แƒแƒ› แƒ”แƒšแƒฌแƒ˜แƒ’แƒœแƒ˜แƒก แƒจแƒ”แƒกแƒแƒฎแƒ”แƒ‘

The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail.

Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed.

Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed.

Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.ย 

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แƒฃแƒ™แƒแƒœแƒแƒœแƒ แƒ™แƒแƒœแƒขแƒ”แƒœแƒขแƒ˜แƒก แƒจแƒ”แƒกแƒแƒฎแƒ”แƒ‘ แƒ›แƒแƒฎแƒกแƒ”แƒœแƒ”แƒ‘แƒ

แƒ›แƒ”แƒขแƒ˜ แƒแƒ•แƒขแƒแƒ แƒ˜แƒกแƒ’แƒแƒœ A.A. Lebedev

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